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本文介绍了Al_2O_3单层钝化膜及Al_2O_3-SiO_2双层钝化膜掩蔽下的外延PNP-3CK2型开关晶体三极管,在高能电子辐照下性能变化的情况,并与无膜管子的辐照情况作了对比。
This article describes the Al_2O_3 single passivation film and Al_2O_3-SiO_2 double passivation film under the mask of the epitaxial PNP-3CK2 type switching transistor performance changes in the high-energy electron beam irradiation, and without film tube irradiation Made a contrast.