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采用RHEED与STM技术对GaAs(001)-(2×6)表面重构下的表面形貌进行研究,研究发现GaAs(001)-(2×6)重构表面是GaAs(001)-β2(2×4)重构表面经530℃,1.33μPa As BEP退火获得,在(2×6)重构下的GaAs(001)表面形貌已经进入表面存在系列单层岛和坑覆盖的无序平坦状态。为了进一步确定(2×6)重构的原胞结构,采用球棍模型对其原胞结构进行模拟,提出新的As表面覆盖率计算方法、结合STM图片分析对球棍模型进行验证和筛选,首次在实验上证实(2×6)重构原胞中存在2个As Dimers和2个Ga Dimers,并以此重构原胞结构构建理论下的(2×6)重构表面,获得结果与STM图片高度吻合。
The surface morphology of GaAs (001) - (2 × 6) surface was studied by RHEED and STM techniques. It was found that the GaAs (001) - (2 × 6) 2 × 4) The reconstructed surface was obtained by As BEP annealing at 530 ℃ and 1.33μPa. The GaAs (001) surface topography under (2 × 6) reconstruction had entered the surface with a series of monolayer islands and pit- status. In order to further determine the (2 × 6) reconstructed cell structure, the cell structure was simulated by using a stick model, a new calculation method of As surface coverage was proposed, and the ball model was verified and screened by STM image analysis. For the first time, it has been proved experimentally that there are 2 As dimers and 2 Ga dimers in (2 × 6) reconstructed cells, and reconstruct the (2 × 6) reconstructed surface under the theory of cell structure construction. STM image highly consistent.