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采用热扩散方法,对AlN薄膜进行了Si掺杂。利用电子能量散射谱(EDS)以及高温变温电导对薄膜进行了分析。EDS测试结果表明:在1 250℃的温度下,氮化硅(SiNx)作为Si的扩散源,可以实现对AlN薄膜的Si热扩散掺杂。高温电流-电压(I-V)测试表明:在460℃测试温度下,AlN薄膜在热扩散掺杂以后,其电导从1.9×10-3S.m-1增加到2.1×10-2S.m-1。高温变温电导测试表明:氮空位(V3N+)和Si在AlN中的激活能为1.03 eV和0.45 eV。
The AlN thin films were doped with Si by thermal diffusion method. The films were analyzed by electron energy dispersive spectroscopy (EDS) and high temperature variable temperature conductance. EDS test results show that SiNx can be used as a diffusion source for Si at a temperature of 1 250 ℃ to thermally diffuse the AlN thin films. The high-temperature current-voltage (I-V) tests showed that the conductivity of the AlN films increased from 1.9 × 10-3S.m-1 to 2.1 × 10-2S.m-1 after thermal diffusion doping at the temperature of 460 ℃. High-temperature temperature-dependent conductance tests show that the activation energies of nitrogen vacancies (V3N +) and Si in AlN are 1.03 eV and 0.45 eV.