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南京电子器件研究所采用φ75mm硅片研制成功脉冲输出功率100W的P波段长脉宽硅脉冲功率晶体管。该器件在电子工程领域有广泛应用。由于这种器件可靠性要求高,工艺难度大,匹配电路要求苛刻,而且工作脉宽长、占空比高,因此,给器件研制带来很多困难,国内长期无法解决。1991年该器件开始研制,同年制出输出50W的样管。1992年进一步改进芯片设计和工艺,优化内匹配电路,研制出脉冲输出100W的功率管。主要技术指标为,测试频率600MHz,脉冲输出功率大于100W,增益大于7dB,集电极效率大于50％。
Nanjing Institute of Electronic Devices using φ75mm silicon successfully developed pulse output power of 100W P-band long pulse width silicon pulse power transistor. The device is widely used in the field of electronic engineering. Due to the high reliability of this device, the process is difficult, the matching circuit is demanding, and the working pulse length is high and the duty cycle is high. Therefore, it brings many difficulties to the device development and can not be solved for a long time in China. The device began to develop in 1991, the same year the output of 50W sample tube. In 1992 to further improve the chip design and process, optimize the internal matching circuit, developed a pulse output power tube 100W. The main technical indicators, the test frequency of 600MHz, pulse output power greater than 100W, gain greater than 7dB, collector efficiency greater than 50%.