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澳大利亚科学家最近报导了一种新的扩散技术,在 GaAs 材料上实现非合金欧姆接触。把一种掺杂感光乳胶膜复在 GaAs 片上,用脉冲激光照射,制得掺锡的 n~+型 GaAs 层,然后在其上实现非合金欧姆接触。这是一种浅层杂质扩散技术,用于 GaAs 金属半导体场效应器件的制备。但热扩散难以得到低阻的非合金欧姆接触,而连续激光又不能独立完成扩散过程,因此,作者使用红宝石脉
Australian scientists recently reported a new diffusion technology that enables non-alloyed ohmic contacts on GaAs materials. A doped photosensitive emulsion film is deposited on a GaAs wafer and implanted by a pulsed laser to form a n + -type GaAs layer doped with tin, and then a non-alloy ohmic contact is realized thereon. This is a shallow impurity diffusion technique for the fabrication of GaAs metal semiconductor field effect devices. However, it is difficult to obtain low-resistance non-alloyed ohmic contacts due to thermal diffusion, while continuous lasers can not complete the diffusion process independently. Therefore, the author uses ruby veins