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研制了耐压达32kV,通态峰值电流达3.7kA的高压超大电流半绝缘GaAs光电导开关.分析了光电导开关在强场下的击穿机理,指出对于间接能带间隙光导材料(如Si)制作的光电导开关,开关的击穿电压主要由陷阱填充限制电导模型决定.而对于直接能带间隙光导材料(如GaAs,InP等)制作的光电导开关,开关击穿主要是由开关体负阻效应在开关阳极产生的空间电荷累积所导致的开关阳极电场剧增引起的.基于转移电子效应对GaAs光电导开关击穿电压进行了理论计算,计算结果与实验相一致.
A high voltage and large current semi-insulating GaAs photoconductive switch with a withstand voltage of 32kV and an on-state peak current of 3.7kA was developed.The breakdown mechanism of the photoconductive switch in a strong field was analyzed and it was pointed out that for the indirect bandgap photoconductive material such as Si ), The breakdown voltage of the switch is mainly decided by the trap-filled limited conductance model, while the photoconductive switch made of the direct band gap photoconductive material (such as GaAs, InP, etc.) is mainly formed by the switch body Negative resistance effect is caused by the sharp increase of the electric field of the switch anode caused by the accumulation of the space charge generated by the switch anode.The breakdown voltage of the GaAs photoconductive switch is calculated theoretically based on the transfer electron effect and the calculated result is consistent with the experiment.