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随着半导体技术和微电子技术的发展,半导体气敏元件的品种、数量和质量都有了很快的发展。为了满足信息社会对气体传感器小型化、集成化和智能化的要求,气敏材料正在向超微细化、薄膜化和复合化的方向发展。超微粒薄膜气敏材料由于具有工作温度低、灵敏度高、响应恢复快、易集成、一致性和稳定性较好的独特优点,在近期内得到了很大的发展,并且成为当前气敏材料研究的热门课题。 本文采用PCVD法生长出均匀透明的非晶氧化铁敏感膜,经热处理而制备的薄膜型气敏元件,无需掺杂便具有优良的气敏性能,显示出良好的应用前景。
With the development of semiconductor technology and microelectronic technology, the variety, quantity and quality of semiconductor gas sensors have been rapidly developed. In order to meet the requirements of the information society for miniaturization, integration and intellectualization of gas sensors, gas-sensitive materials are being developed in the fields of ultrafineness, thinning and compounding. Due to its unique advantages of low working temperature, high sensitivity, fast response, easy integration, good consistency and stability, the ultrafine granular gas sensing material has been greatly developed in the near future and has become the current research on gas-sensitive materials The hot topic. In this paper, a uniform and transparent amorphous iron oxide sensitive film is grown by PCVD method. The thin film gas sensing element prepared by heat treatment has excellent gas sensing performance without doping and shows good application prospect.