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在室温下制备了基于氧化铟锡(ITO)的底栅结构无结薄膜晶体管.源漏电极和沟道层都是同样的ITO薄膜材料,没有形成传统的源极结和漏极结,因而极大的简化了制备流程,降低了工艺成本.使用具有大电容的双电荷层SiO_2作为栅介质,发现当ITO沟道层的厚度降到约20 nm时,器件的栅极电压可以很好的调控源漏电流.这些无结薄膜晶体管具有良好的器件性能:低工作电压(1.5 V),小亚阈值摆幅(0.13 V/dec)、高迁移率(21.56 cm~2/V·s)和大开关电流比(1.3×10~6).这些器件即使直接在大气环境中放置4个月,器件性能也没有明显恶化:亚阈值摆幅保持为0.13V/dec,迁移率略微下降至18.99 cm~2/V·s,开关电流比依然大于10~6.这种工作电压低、工艺简单、性能稳定的无结低电压薄膜晶体管非常有希望应用于低能耗便携式电子产品以及新型传感器领域.
A bottom-gate structure junctionless thin film transistor based on indium tin oxide (ITO) was prepared at room temperature.The source and drain electrodes and the channel layer were all the same ITO thin film materials, and the traditional source and drain junctions were not formed, Greatly simplifies the preparation process and reduces the process cost.Using the electric double layer SiO2 with large capacitance as the gate dielectric, the gate voltage of the device can be well regulated when the thickness of the ITO channel layer is reduced to about 20 nm Source-drain current. These junctionless thin-film transistors have good device performance: low operating voltage (1.5 V), small subthreshold swing (0.13 V / dec), high mobility (21.56 cm 2 / V · s) Switching current ratio (1.3 × 10 ~ 6). Even if these devices were placed directly in the atmosphere for 4 months, the performance of the device was not significantly deteriorated: the subthreshold swing remained at 0.13 V / dec and the mobility decreased slightly to 18.99 cm ~ 2 / V · s, the switching current ratio is still greater than 10 ~ 6. This low operating voltage, simple process, stable performance of non-junction low voltage TFT is very promising for low-power portable electronic products and new sensors.