Characteristic analysis of the optical delay in frequency response of resonant cavity enhanced (RCE)

• 作 者: 郭剑川 左玉华 张云 丁武昌 成步文 余金中 王启明
• 机 构: State Key Laboratory on Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sc
• 出 处: Chinese Physics B
• 发表日期: 2009年06期
• 关键词: photodetector resonant bandwidth excluding limiting itself exactly indispensable

With consideration of the modulation frequency of the input lightwave itself, we present a new model to calculate the quantum effciency of RCE p-i-n photodetectors (PD) by superimposition of multiple reflected lightwaves. For the first time, the optical delay, another important factor limiting the electrical bandwidth of RCE p-i-n PD excluding the transit time of the carriers and RCd response of the photodetector, is analyzed and discussed in detail. The optical delay dominates the bandwidth of RCE p-i-n PD when its active layer is thinner than several 10 nm. These three limiting factors must be considered exactly for design of ultra-high-speed RCE p-i-n PD.

With consideration of the modulation frequency of the input lightwave itself, we present a new model to calculate the quantum effciency of RCE pin photodetectors (PD) by superimposition of multiple reflected light waves.For the first time, the optical delay, another important factor limiting the electrical bandwidth of RCE pin PD excluding the transit time of the carriers and RCd response of the photodetector, is analyzed and discussed in detail. The optical delay dominates the bandwidth of RCE pin PD when its active layer is thinner than several 10 nm. These three limiting factors must be considered exactly for design of ultra-high-speed RCE pin PD.