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We demonstrate the formation of ultraslow dark optical solitons with a four-level scheme in an asymmetricsemiconductor double quantum well (SDQW) structure based on intersubband transitions by using only a low-intensitypulsed laser radiation. With appropriate conditions we show numerically that the dark optical soliton can travel with aultraslow group velocity V_g/c ～ -10~(-3). Such a semiconductor system is much more practical than its atomic counterpartbecause of its flexible design and the controllable interference strength. This nonlinear optical process in the SDQWsolid-state material may be used for the control technology of optical delay lines and optical buffers.
We demonstrate the formation of ultraslow dark optical solitons with a four-level scheme in an asymmetric semiconductor double quantum well (SDQW) structure based on intersubband transitions by using only low-intensity pulsed laser radiation. With appropriate conditions we show numerically that the dark optical soliton Such a semiconductor system is much more practical than its atomic counterpartbecause of its flexible design and the controllable interference strength. This nonlinear optical process in the SDQWsolid-state material may be used for the control technology of optical delay lines and optical buffers.