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采用栅氧化前硅表面在 H2 SO4/ H2 O2 中形成化学氧化层方法和氮气稀释氧化制备出 3.2、 4和 6 nm的 Si O2超薄栅介质 ,并研究了其特性 .实验结果表明 ,恒流应力下 3.2和 4nm栅介质发生软击穿现象 .随着栅介质减薄 ,永久击穿电场强度增加 ,但恒流应力下软击穿电荷下降 .软击穿后栅介质低场漏电流无规则增大 .研究还表明 ,用软击穿电荷分布计算超薄栅介质有效缺陷密度比用永久击穿场强分布计算的要大 .在探讨软击穿和永久击穿机理的基础上解释了实验结果
The Si O2 ultra-thin gate dielectric of 3.2, 4 and 6 nm was prepared by the chemical oxidation of the gate oxide on the silicon surface before H2 SO 4 / H 2 O 2 oxidation and the nitrogen dilution oxidation. The experimental results show that the constant current With the gate dielectric thinning, the strength of the permanent breakdown electric field increases, but the soft breakdown charge decreases under the constant current stress. The low leakage current of the gate dielectric after the soft breakdown is irregular The results also show that the effective defect density of the ultra-thin gate dielectric calculated by the soft breakdown charge distribution is larger than that calculated by the permanent breakdown field strength distribution.The experiment is explained on the basis of exploring the mechanism of soft breakdown and permanent breakdown result