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从理论上计算了厚度为 110 nm的 W0 .95 Ni0 .0 5 金属薄膜应变条在 In Ga As P/ In P双异质结构中形成的应力场分布 ,及由应力场分布引起的折射率变化 .在 W0 .95 Ni0 .0 5 金属薄膜应变条下半导体中 0 .2— 2μm深度范围内 ,由应变引起条形波导轴中央的介电常数 ε相应增加 2 .3× 10 - 1— 2 .2× 10 - 2 (2 μm应变条宽 )和 1.2× 10 - 1— 4.1× 10 - 2(4μm应变条宽 ) .同时 ,测量了由 W0 .95 Ni0 .0 5 金属薄膜应变条所形成的 In Ga As P/ In P双异质结光弹效应波导结构导波的近场光模分布 .从理论计算和实验结果两方面证实了 In Ga As P/ In P双异质结光弹效应波导结构对侧向光具有良好的限制作用
The stress field distribution of W0.95 Ni0.0 5 metal thin film strain gauge with a thickness of 110 nm formed in the In Ga As P / In P double heterostructure and the change of the refractive index caused by the stress field distribution are theoretically calculated In the range of 0.2-2 μm in the semiconductor of W0.95 Ni0.0 5 metal thin film strain gauge, the dielectric constant ε at the center of the strip waveguide axis increases by about 2.3 × 10 - 1 - 2 due to the strain. 2 × 10 - 2 (2 μm strain bar width) and 1.2 × 10 - 1 - 4.1 × 10 - 2 (4 μm strain bar width) .At the same time, In Ga As P / In P double heterostructure photoacoustic waveguiding structure guided wave near-field photomodulation.From both theoretical calculations and experimental results, it is confirmed that In Ga As P / In P double heterojunction photoelastic effect waveguides The structure of the lateral light has a good limiting effect