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这种新的纵向功率MOSFET结构称为U形槽MOSFET(RMOS),它是采用反应离子腐蚀(RIBE)技术形成U形槽后提供纵向沟道。这种结构的特点在于能减小导通电阻和提高容量密度。本文计算了这种结构的导通电阻和容量密度之间的关系。该结构能获得较VMOS和DMOS结构低的单位面积导通电阻。并详细说明了试验结果。
This new vertical power MOSFET structure, called the U-shaped trench MOSFET (RMOS), is a vertical trench that is formed using reactive ion etching (RIBE) to form a U-shaped trench. This structure is characterized by reduced on-resistance and increased capacity density. This article calculates the relationship between the on-resistance and the capacity density of this structure. This structure achieves lower on-resistance per unit area than the VMOS and DMOS structures. And detailed test results.