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本文介绍5～6.5千兆赫带宽的微波低噪声GaAs场效应晶管放大器。采用聚四氟乙烯玻璃纤维板作衬底。三级放大器的增益为20分贝,6千兆赫下测得的噪声系数最好为4.6分贝,带内平坦度在±1分贝以内。本文给出了放大器结构设计和测试结果。
This article describes a 5- to 6.5-GHz microwave low-noise GaAs FET amplifier. PTFE fiberglass board for the substrate. The gain of the three-stage amplifier is 20 dB, the noise figure measured at 6 GHz is preferably 4.6 dB, and the in-band flatness is within ± 1 dB. This article gives the amplifier structure design and test results.