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本文提出了晶粒间界电流调整的新概念。讨论了晶粒间界的少数载流子复合以及晶粒间界的少数载流子迁移率和寿命。利用新概念对多晶硅电阻负阻特性给出了初步的理论分析。
This paper presents a new concept of grain boundary current adjustment. The minority carrier recombination and intergranular minority carrier mobility and lifetime in the grain boundaries are discussed. The new theory is used to give a preliminary theoretical analysis of the negative resistance characteristics of polysilicon resistors.