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本文论述了半导体硅材料的发展特点与趋向。超纯硅的重点在于工艺改革,国外许多公司致力改进西门子工艺设备,研究开发低成本多晶硅新工艺、方法,筹建、扩建大型硅厂等,以降低成本、扩大产量为主;硅单晶侧重工艺设备改革,各国竞相研制现代自动化大直径单晶炉,以增大直径,提高质量为主,研究集中在控制氧含量、降低碳含量、消除微缺陷和提高电阻率微观均匀性等方面;硅片精细加工是发展LSI关键步骤,已成为八十年代发展的新动向,提高表面平整度和制备无损伤表面尤为重要。文中侧重指出提高硅材料质量、削减成本和扩大产量的途径与技术措施。为迎接我国LSI大发展的到来,我们在调研基础上,提出加速发展我国硅工业的十项改革建议,试图形成一个各环节协调发展的、具有我国特色的“硅洲”的设想蓝图。
This article discusses the characteristics and trends of the development of semiconductor silicon materials. Ultra-pure silicon focus on process reform, many foreign companies are committed to improving the Siemens process equipment, research and development of low-cost polysilicon new processes and methods, preparation, expansion of large-scale silicon plant, in order to reduce costs and expand production-based; Equipment reform, countries are competing to develop modern automation large diameter single crystal furnace, to increase the diameter, improve the quality of the main focus on the control of oxygen content, reduce carbon content, eliminate micro-defects and improve the uniformity of resistivity and other aspects; silicon Fine processing is a key step in the development of LSI, which has become a new trend of development in the 1980s. It is especially important to improve the surface flatness and prepare the non-destructive surface. The article focuses on ways to improve the quality of silicon materials, reduce costs and expand production channels and technical measures. In order to meet the great development of LSI in our country, on the basis of investigation, we put forward suggestions on accelerating the development of China’s silicon industry in the ten reforms and trying to form a blueprint for the development of “Silicon Island” featuring the coordinated development of all sectors and featuring Chinese characteristics.