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卤化银的熔点较低,氯化银为455℃、溴化银为432℃、碘化银为558℃。Ruzicka等曾用石墨棒浸粘卤化银的熔融盐,用作卤离子选择性电极,但其灵敏度及寿命均不如均相晶体型压片膜卤电极。本文报导一种晶体熔融膜卤离子电极,系将卤化银及硫化银混合晶体熔结于石墨棒顶端的空穴中,制成均相晶体膜电极,石墨棒作为电极躯体及传导介质。电极的结构简单,制作方便,一般实验室均能自己制造;其性能及寿命,则与均相晶体压片膜卤电极相同。
Silver halide has a lower melting point, silver chloride at 455 ° C, silver bromide at 432 ° C and silver iodide at 558 ° C. Ruzicka et al. Used graphite rods to dip-fuse molten salt of silver halide as a halide-selective electrode, but their sensitivity and lifetime are not as good as those of the homogeneous crystal type tabletting film halogen electrode. This paper reports a crystal melting film halide ion electrode, which combines a silver halide and silver sulfide mixed crystal into the cavity at the top of a graphite rod to form a homogeneous crystal membrane electrode. The graphite rod acts as an electrode body and a conducting medium. The electrode structure is simple, easy to manufacture, the general laboratory can manufacture their own; its performance and life expectancy, and the homogeneous crystal tablet film halogen electrode the same.