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叠栅注入MOS晶体管,在读、编码和清除时,利用叠在浮动栅上的控制栅来选择单元。编码是通过由沟道向浮动栅注入热电子来完成的,这就导致了开启电压一个很大的向上漂移。在两种状态下,都是以增强型工作的。电清除能够通过在源-衬底结处雪崩击穿注入热空穴和通过Fowler-Nordheim电子注入来完成。因为在清除时,浮动栅能够被充正电,而且沟道的一部份不被浮动栅覆盖,这样,在清除以后,SIMOS晶体管保证是增强型。在矩阵阵列中,存储单元只由SIMOS晶体管组成。译码器、读出放大器、等等,能够集成在同样的衬度上。清除能成组进行,或一个字一个字地进行。讨论了在编码和清除时,存储单元所受到的不同打扰效应。SIMOS存储器的单元面积是850μm~2。给出了全译码8192位SIMOS存储器芯片的照片。
MOS gate injection MOS transistor, the stack and floating gate in the control gate to select the cell during reading, encoding and cleaning. The encoding is done by injecting hot electrons from the channel to the floating gate, which results in a large upward drift of the turn-on voltage. In both states, it is all about enhanced work. Electro-removal can be done by injecting hot holes avalanche breakdown at the source-substrate junction and by Fowler-Nordheim electron injection. Since the floating gate can be positively charged and a portion of the channel is not covered by the floating gate when it is removed, the SIMOS transistor is guaranteed to be enhanced after it has been removed. In a matrix array, memory cells consist of only SIMOS transistors. Decoder, sense amplifier, etc., can be integrated on the same contrast. Clearing can be done in groups, or word by word. Discussed the different disturbing effects on the memory cell during encoding and clearing. The cell area of SIMOS memory is 850μm ~ 2. Gives the full decoding 8192 SIMOS memory chip photos.