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本文描述一个只用5伏电源并且与TTL相容的两个4096位的MOS随机存储器,该存储器在最坏情况下读出时间为200ns,功耗为370mw。它可以组成1K×4位,也可以组成4K×1位。用选择金属掩模的方法在同样的192密耳×197密耳的模片上面获得两个器件,并且将两个芯片封装在一个22引线双列直插式管壳内。一个新的存储器状态输出信号可以提供系统设计者允许利用实际的存储器特性,而不是最坏情况下的图表说明书。这里除了简化了时间关系外还允许改进系统的标准。
This article describes two 4096-bit MOS random-access memories that operate on a 5-volt power supply and are TTL-compatible with a worst case read time of 200ns and a power consumption of 370mW. It can be composed of 1K × 4 bits, can also be composed of 4K × 1 bit. Two devices were obtained on the same 192 mil × 197 mil die with a metal mask selection and the two chips were packaged in a 22-lead dual in-line package. A new memory state output signal can provide system designers permission to use the actual memory characteristics, rather than the worst-case charting instructions. In addition to simplifying the time relationship here also allows the system to improve standards.