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对国产加固６４ＨＣ０４高速ＣＭＯＳ电路进行了不同剂量率的辐照响应和室温退火特性研究。探讨了５４ＨＣ０４电路在不同剂量率辐照下的损伤机理和失效模式的差异及其对高速ＣＭＯＳ电路在辐射环境中应用可靠性的影响。
The radiation response and annealing at room temperature of different dosages of 64HC04 high speed CMOS circuits were studied. The difference of damage mechanism and failure mode of 54HC04 circuit exposed to different dose rate and its effect on the reliability of high speed CMOS circuit in radiation environment were discussed.