Structural,electrical and optical characterization of InGaN layers grown by MOVPE

• 作 者: Yildiz A ztürk M Kemal Bosi M zelik S Kasap M
• 机 构: Physics Department,University of Ahi Evran,Asikpasa Kampusu,Mineral Analysis and Technology Departme
• 出 处: Chinese Physics B
• 发表日期: 2009年09期
• 关键词: sapphire template rotation vapour resistivity ternary dislocation clearly defect

We present a study on n-type ternary InGaN layers grown by atmospheric pressure metalorganic vapour phase epitaxy(MOVPE) on GaN template/(0001) sapphire substrate.An investigation of the different growth conditions on n-type InxGa1 xN(x = 0.06 0.135) alloys was done for a series of five samples.The structural,electrical and optical properties were characterized by high resolution x-ray diffraction(HRXRD),Hall effect and photoluminescence(PL).Experimental results showed that different growth conditions,namely substrate rotation(SR) and change of total H2 flow(THF),strongly affect the properties of InGaN layers.This case can be clearly observed from the analytical results.When the SR speed decreased,the HRXRD scan peak of the samples shifted along a higher angle.Therefore,increasing the SR speed changed important structural properties of InGaN alloys such as peak broadening,values of strain,lattice parameters and defects including tilt,twist and dislocation density.From PL results it is observed that the growth conditions can be changed to control the emission wavelength and it is possible to shift the emission wavelength towards the green.Hall effect measurement has shown that the resistivity of the samples changes dramatically when THF changes.

We present a study on n-type ternary InGaN layers grown by atmospheric pressure metalorganic vapor phase epitaxy (MOVPE) on GaN template / (0001) sapphire substrate. Investigation on the different growth conditions on n-type InxGa1 xN (x = 0.06 0.135 ) alloys was done for a series of five samples. Structural and electrical properties of were characterized by high resolution x-ray diffraction (HRXRD), Hall effect and photoluminescence (PL). Experimental results showed that different growth conditions, namely substrate rotation (SR) and change of total H2 flow (THF), strongly affect the properties of InGaN layers.This case can be clearly observed from the analytical results .When the SR speed decreased, the HRXRD scan peak of the samples shifted along a higher angle . Wherefore, increasing the SR speed changed important structural properties of InGaN alloys such as peak broadening, values ​​of strain, lattice parameters and defects including tilt, twist and dislocation density. Fro PL results it is observed that the growth conditions can be changed to control the emission wavelength towards the green. Height effect measurement has shown the resistivity of the samples changes dramatically when THF changes.