Study on the degradation of NMOSFETs with ultra-thin gate oxide under channel hot electron stress at

• 作 者: 胡仕刚 郝跃 马晓华 曹艳荣 陈炽 吴笑峰
• 机 构: School of Microelectronics,Xidian University,Key Laboratory of Wide Band-Gap Semiconductor Materials
• 出 处: Chinese Physics B
• 发表日期: 2009年12期
• 关键词: trapped charges leakage emphasis explain drain trapping semicon tunnel NMOS

This paper studies the degradation of device parameters and that of stress induced leakage current (SILC) of thin tunnel gate oxide under channel hot electron (CHE) stress at high temperature by using n-channel metal oxide semiconductor field effect transistors (NMOSFETs) with 1.4-nm gate oxides.The degradation of device parameters under CHE stress exhibits saturating time dependence at high temperature.The emphasis of this paper is on SILC of an ultra-thin-gate-oxide under CHE stress at high temperature.Based on the experimental results,it is found that there is a linear correlation between SILC degradation and V h degradation in NMOSFETs during CHE stress.A model of the combined effect of oxide trapped negative charges and interface traps is developed to explain the origin of SILC during CHE stress.

This paper studies the degradation of device parameters and that of stress induced leakage current (SILC) of thin tunnel gate oxide under channel hot electron (CHE) stress at high temperature by using n-channel metal oxide semiconductor field effect transistors (NMOSFETs) 1.4 -nm gate oxides. The degradation of device parameters under CHE stress exhibits saturating time dependence at high temperature. The emphasis of this paper is on SILC of an ultra-thin-gate-oxide under CHE stress at high temperature. , it is found that there is a linear correlation between SILC degradation and V h degradation in NMOSFETs during CHE stress. A model of the combined effect of oxide trapped negative charges and interface traps is developed to explain the origin of SILC during CHE stress.