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本文给出了微波低噪声放大器设计所必需的噪声参量(F_0、Γ_on、R_n)、增益参量(G_α0、Γ_0v、R_n和散射参量(S_(11)、S_(22)、|S_(12)|、|S_(21)|、LS_(12)S_(21))等全部GaAs场效应晶体管特性的测量方法。采用的设备就是一种费时的装有矢量反射计的噪声系数测量系统,只用常规方法测量噪声参量也同样需要这种设备。本文详细叙述了测量装置和实验步骤,同时也考虑了计算机辅助数据处理技术。本文报道了一个样品器件特性与频率(4～12千兆赫)和漏流关系的实验结果,并且将用本方法提供的S参量与用网络分析仪测得的S参量作了比较。
The noise parameters (F_0, Γ_on, R_n), gain parameters (G_α0, Γ_0v, R_n and scattering parameters (S_ (11), S_ (22), | S_ (12) |) of the microwave LNA are given in this paper. , | S_ (21) |, LS_ (12) S_ (21)), etc. The equipment used is a time-consuming noise figure measurement system equipped with a vector reflectometer, which uses only conventional This method is also required for the measurement of noise parameters.This paper describes the measuring device and the experimental steps in detail, as well as the computer-aided data processing techniques.This paper reports the characteristics of a sample device with frequency (4 ~ 12 GHz) and leakage Relationship between the experimental results, and will use this method to provide the S parameters and network analyzer measured S parameters were compared.