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含有BeO添加剂的SiC陶瓷,适用于大规模集成电路的陶瓷管壳。该管壳结构有点类似于CER-DIP结构工艺,即在SiC陶瓷衬底和陶瓷盖之间采用了一个引线框和密封玻璃垫片,为得到一个高可靠的陶瓷管壳,采用了低膨胀的莫来石(mullite)陶瓷盖和低膨胀的密封玻璃。在SiC衬底的背面用弹性有机硅树脂粘结铝散热片。这种管壳结构中,当热沉的空气流速为5m/s时,其结-环境的热阻约为9℃/W,该管壳的各种特征与目前使用的低热阻和铜冷却螺栓的Al_2O_3管壳相类似。
SiC ceramic with BeO additive for ceramic housings for large scale integrated circuits. The package structure is a bit similar to the CER-DIP process, which uses a lead frame and a sealing glass gasket between the SiC ceramic substrate and the ceramic cap. To obtain a highly reliable ceramic tube, a low expansion Mullite ceramic cover and low expansion sealing glass. The aluminum heat sink is bonded to the back of the SiC substrate with an elastic silicone resin. This package structure, when the heat sink air flow rate of 5m / s, its junction - the thermal resistance of the environment is about 9 ℃ / W, the shell of the various features and the current low thermal resistance and copper cooling bolts Al 2 O 3 shell similar.