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一、引言扫描电镜EBIC(电子束感生)方法在半导体材料与器件的研究中,有其独特的优点,已被广泛应用。通常应用EBIC方法为平面法,即PN结界面平行于观察平面。本文介绍了剖面EBIC方法。在此方法中,PN结界面垂直于观察平面,成为直接暴露于大气中的自由面。这种疗法能比平面法更直观地表现结的性质,其示意图如图1所示。二、试样制备1.直接介理法:对于简单图形结构的半导体器件,可以采用直接介理芯片的方法。把介理后的芯片垂直放置,背面用银浆粘于半导体样品台的铜架上,与之做欧姆接触,作为一个电极引出。再用钨丝针触及
I. Introduction SEM (Electron Beam Induced) method has its unique advantages in the research of semiconductor materials and devices and has been widely used. The EBIC method is usually applied as a planar method, ie the PN junction interface is parallel to the observation plane. This article describes the section EBIC method. In this method, the PN junction interface is perpendicular to the viewing plane and becomes the free surface directly exposed to the atmosphere. This treatment can be more intuitive than the plane method to show the nature of the junction, the schematic diagram shown in Figure 1. Second, the sample preparation 1 direct method: For simple graphic structure of semiconductor devices, you can use the method of direct interface chip. The chip after the treatment of the vertical placement, the back of the silver paste on the semiconductor sample stage of the copper holder, ohm contact with it, as an electrode leads. Then touch the tungsten needle