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报道了一种模拟共振反应产额曲线的方法。利用~(11)B(p,d)~8Be在E_P= 163keV的共振反应,通过反应产额曲线的模拟研究了不同衬底温度下辉光放电制备的掺硼氢化非晶硅-碳膜中硼的深度分布。给出了不同衬底温度下淀积薄膜中硼深度分布的一些特征。结果表明反应产额曲线的模拟对改善共振反应分析的深度分辨和简化分析方法是有效的,对掺硼非晶硅薄膜中硼的深度分布研究是有益的。
A method to simulate the yield curve of resonance reaction was reported. By using the resonance reaction of ~ (11) B (p, d) ~8Be at E_P = 163keV, the reaction yield curves were used to simulate the effects of different substrate temperatures on the doping of borohydride-amorphous silicon- Depth of boron distribution. Some characteristics of boron depth distribution in deposited films at different substrate temperatures are given. The results show that the simulation of reaction yield curve is effective to improve the resolution and simplified analysis of resonance response analysis. It is beneficial to study the boron depth distribution in boron-doped amorphous silicon thin films.