论文部分内容阅读
基于直接键合硅片表面能与退火温度的关系曲线， 定量讨论了键合时键合界面上的微观动力学变化过程。首次提出五阶段键合模型计算值与实测表面能曲线相一致，初步确定了键合过程中界面发生的微观反应机理。
Based on the curve of the surface energy of the directly bonded silicon wafer and the annealing temperature, the micro-kinetic changes on the bonded interface at the bonding were quantitatively discussed. For the first time, the calculated values of the five-phase bonding model are in good agreement with the measured surface energy curves, and the microscopic reaction mechanism at the interface during the bonding process is preliminarily determined.