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集电极扩散隔离器件——在把双极集成电路大规模集成化时的最大障碍是隔离,这种结构的目的是尽可能减少隔离所需的面积。集电极扩散隔离(以后缩写成CDI)的特点是把集电极的引出区同时也作为隔离区使用。与过去的晶体管相比,有如下几个不同点: 1) 过去的集电极是使用n型外延生长层,而CDI只是使用n~+型扩散隐埋层。 2) 基区层过去是在集电极n型外延层上做P型扩散形成的,而在CDI结构中却是
Collector Diffusion Isolation Device - The biggest obstacle to large-scale integration of bipolar integrated circuits is isolation. The purpose of this structure is to minimize the area required for isolation. Collector Diffusion Isolation (hereinafter abbreviated as CDI) is characterized by the use of the collector lead-out area as an isolation area. Compared with the past, the transistor has the following differences: 1) In the past, the n-type epitaxial growth layer was used as the collector, while the CDI only used n ~ + type diffusion buried layer. 2) The base layer was formed by P-type diffusion on the collector n-type epitaxial layer in the past, but was