We report on N-doped p-type ZnO films with the c-axis parallel to the substrate. ZnO films were prepared onan α-A12O3 (0001) substrate by solid-source chemical
Crystal tilts in epitaxially laterally overgrown (ELO) GaN films via hydride vapour phase epitaxy (HVPE) onsapphire substrates have been investigated by using t
Drift mode linear growth rate and quasi-linear ion thermal transport in the reversed magnetic shear plasma are investigated by using the two-fluid theory, previ