【摘 要】
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Crystal tilts in epitaxially laterally overgrown (ELO) GaN films via hydride vapour phase epitaxy (HVPE) onsapphire substrates have been investigated by using t
【机 构】
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Department of Physics and National Laboratory of Solid State Microstructures, Nanjing University, Na
论文部分内容阅读
Crystal tilts in epitaxially laterally overgrown (ELO) GaN films via hydride vapour phase epitaxy (HVPE) onsapphire substrates have been investigated by using the four-circle x-ray diffraction method. Three diffractionpeaks corresponding to the (0002) reflection of vertically epitaxial and tilted GaN domains are observable in thex-ray rocking curve. The angle separations △ω between the main peak and two lobes change with the azimuthangle φ. The dependence of △ω on φ and the crystal tilt angle θ has been calculated based on the standardkinetic x-ray diffraction model. The crystal tilt angle of a typical HVPE ELO GaN sample has been determinedto be 2.379°.
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