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利用锂喹啉配合物 (8-hydroxy - quinolinatolithium ,Liq)作电子注入层 ,制备了结构为氧化铟锡 /锂喹啉配合物 /铝 {ITO(indiumtinoxide) /TPD(N ,N′ di phenyl N ,N′ bis(3 methylphenyl) 1,1′biphenyl 4 ,4′diamine) /Alq3 [tris (8 hydroxy quinolinato)aluminum]/Liq/Al}的电致发光器件。通过改变电子注入层Liq的厚度 ,考查了Liq厚度对器件电致发光效率及电流密度电压关系的影响。实验表明Liq厚度大约为 0 .5nm左右时器件的性能最佳 ,电致发光效率约为没有Liq器件效率的 5倍 ,而定电流下的工作电压最低 ,其原因可归于Liq在金属铝电极与有机层Alq3 之间产生偶极层 ,使铝与有机层间的界面接近欧姆接触 ,从而使电子注入效率大幅提高 ;随着Liq厚度的增加 ,器件的电致发光效率降低 ,而定电流下的工作电压升高 ,与同类型以LiF作注入层的器件相比 ,这种器件性能受厚度影响而变化的趋势是类似的 ,但以Liq作注入层的器件具有较低的厚度敏感性 ,这是由于LiF为绝缘体 ,而Liq为半导体的缘故。Liq作注入层器件的这种对注入层厚度的不敏感性对批量生产中所用的大尺寸基底来说是非常有利的
The structure of indium tin oxide / lithium quinoline complex / aluminum {indium tin oxide / TPD (N, N ’di phenyl N) was prepared by using 8-hydroxyquinolinatolithium as electron injection layer. , N ’bis (3 methylphenyl) 1,1’biphenyl 4, 4’diamine) / Alq3 [tris (8 hydroxy quinolinato) aluminum] / Liq / Al}. By changing the thickness of Liq, the influence of Liq thickness on the relationship between electroluminescence efficiency and current density is investigated. The experimental results show that the device performance is the best when the thickness of Liq is about 0.5 nm, the efficiency of electroluminescence is about 5 times higher than that without Liq device, and the lowest operating voltage under constant current can be attributed to Liq The formation of dipole layer between the organic layer Alq3, the interface between the aluminum and the organic layer close to ohmic contact, so that the electron injection efficiency is greatly improved; with Liq thickness increases, the device electroluminescence efficiency decreases, while the constant current The higher the operating voltage, the similar to the LiF for the same type of device, the device performance is affected by the thickness of the trend of change is similar, but with Liq for the injection layer device has a lower thickness sensitivity, which It is because LiF is an insulator, and Liq is a semiconductor. This insensitivity to the thickness of the implanted layer of Liq as an implanted layer device is very advantageous for large-sized substrates used in mass production