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Recently,development of high technology has been required for the formation of thin uniform film in manufac- turing processes of semiconductor as the semiconductor instruments become more sophisticated.Spin coating is usually used for spreading photoresist on a wafer surface.However,since rotating speed of the disk is very high in spin coating,the dropped photoresist scatters outward and reattaches on the film surface.A catch cup is set up outside the wafer in spin coating,and scattered photoresist mist is removed from the wafer edge by the exhaust flow generated at the gap between the wafer edge and the catch cup.In the dry process of a spin coating,it is a serious concern that the fdm thickness increases near the wafer edge in the case of low rotating speed.The pur- pose of this study is to make clear the effect of the catch cup geometry on the 3D boundary layer flow over the wafer surface and the drying rate of liquid film.
Recently, development of high technology has been required for the formation of thin uniform film in manufac- turing processes of semiconductor as the semiconductor instruments become more sophisticated. Spin coating is usually used for spreading photoresist on a wafer surface. However, since rotating speed of the disk is very high in spin coating, the dropped photoresist scatters outward and reattaches on the film surface. A catch cup is set up outside the wafer in spin coating, and the scattered photoresist mist is removed from the wafer edge by the exhaust flow generated at the gap between the wafer edge and the catch cup. the dry process of a spin coating, it is a serious concern that the fdm increases increases near the wafer edge in the case of low rotating speed. The pur-pose of this study is to make clear the effect of the catch cup geometry on the 3D boundary layer flow over the wafer surface and the drying rate of liquid film.