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用射频磁控溅射方法在不同基片温度下玻璃基片上分别制备NiO单层膜、NiFe单层膜和NiO／NiFe双层膜，研究了不同基片温度对膜的磁性能的影响．用振动样品磁强计（VSM）分析了膜的磁特性，结果表明：基片温度260℃时淀积的NiFe膜矫顽力Hc为184A·m－1，小于室温淀积NiFe膜的Hc（584A·m－1），且磁滞回线的矩形度更好．室温下淀积NiO（50nm）／NiFe（15nm）双层膜的Hc为4000A·m－1，交换耦会场（HEX）仅为1600A·m－1，磁滞回线的短形度很差，而260℃时淀积的双层膜的Hc下降到3120A·m－1，HEX却增大为4640A·m－1，同时磁滞回线的矩形度也得到改善，其截止温度TB高达230℃．X射线衍射（XRD）分析了膜的织构，结果表明：室温下淀积NiO膜呈现（220）织构，而260℃时淀积NiO膜呈现（111）织构；室温和260℃淀积的NiFe膜都呈（111）织构，但后者晶粒比前者大．
The effects of different substrate temperature on the magnetic properties of the films were studied by RF magnetron sputtering on NiO single layer films, NiFe single layer films and NiO / NiFe double layer films on glass substrates with different substrate temperatures. The magnetic properties of the films were analyzed by vibrating sample magnetometer (VSM). The results showed that the coercivity Hc of the NiFe films deposited at 260 ℃ was 184A · m-1, which was lower than that of the NiFe films deposited at room temperature 584A · m-1), and the hysteresis loop has a better degree of squareness. The Hc of NiO (50nm) / NiFe (15nm) bilayer deposited at room temperature is 4000A · m-1, the exchange coupling field (HEX) is only 1600A · m-1, However, the Hc of the bilayer deposited at 260 ℃ decreased to 3120A · m-1, while the HEX increased to 4640A · m-1. At the same time, the squareness of the hysteresis loop was also improved and the cut-off temperature TB was as high as 230 ℃ . The texture of the film was analyzed by X-ray diffraction (XRD). The results show that the NiO film deposited at room temperature exhibits (220) texture and the NiO film deposited at 260 ℃ exhibits (111) texture. NiFe films are (111) texture, but the latter is larger than the former grain.