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采用溶胶-凝胶法在Si(111)和Pt/Ti/SiO2/Si衬底上制备Ba4Nd9.33Ti18O54(BNT)介质薄膜,采用X线衍射仪(XRD)和扫描电子显微镜(SEM)研究了不同退火温度对薄膜结构和表面形貌的影响。结果表明当薄膜在950℃下退火2h后具有较好结晶质量的钨青铜结构,所得到的薄膜表面较为疏松;通过掺入质量分数为2%B2O3-2SiO2,可进一步将BNT薄膜的晶化温度降至900℃,且结构致密。介电性能测试表明,1 MHz频率下BNST薄膜的介电常数为45,介电损耗为1.1%,30V偏压下漏电流密度为4.13×10-6 A/cm2。
The Ba4Nd9.33Ti18O54 (BNT) thin films were prepared on Si (111) and Pt / Ti / SiO2 / Si substrates by sol-gel method and the XRD and SEM Effect of Annealing Temperature on Structure and Surface Morphology of Thin Films. The results show that when the film is annealed at 950 ℃ for 2h, it has a better crystalline quality of tungsten bronze structure, the surface of the obtained film is more loose; by blending 2% B2O3-2SiO2 mass fraction, the BNT film crystallization temperature Down to 900 ℃, and the structure is compact. Dielectric properties tests show that the dielectric constant of the BNST thin film is 45 at 1.1 MHz and the dielectric loss is 1.1%. The leakage current density at the 30V bias is 4.13 × 10-6 A / cm2.