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亚微米硅ｐ－ＭＯＳ晶体管模拟的漂移扩散与蒙特卡罗方法比较＝［刊，俄］／－１９９３．２２（１）．－８０～８５近年来，在模拟集成电路元件（包括硅ＭＯＳ晶体管）中普遍采用漂移。扩散模型。在元件有源区特征尺寸非常小的条件下。漂移－扩散模型可以非常精确地计算出...
Simulation of sub-micron silicon p-MOS transistor drift diffusion and Monte Carlo method comparison = [, Russia] / - 1993.22 (1). -80 ~ 85 In recent years, drift has been commonly used in analog integrated circuit devices (including silicon MOS transistors). Diffusion model. In the element active area feature size is very small. Drift - diffusion model can be very accurately calculated ...