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为了满足未来放大器的设计要求,高频功率晶体管必须同时满足某些技术要求,如在单一频率或整个宽频范围内的大输出功率(CW和脉冲工作),高效率和高增益等。正在研制的Si和GaAs功率静电感应晶体管(SIT)就立足于满足HF到X波段频率范围工作的这些要求。结果表明,迄今研制的Si SIT很适于HF、VHF和UHF(1MHz～1GHz)应用。采用各种器件设计和放大器电路结构以论证大功率(CW和脉冲工作)JHF性能和宽带HF/VHF性能。单端表面栅SIT(SGSIT)具有CW输出功率水平,它在225MHz时大于200W、漏极效率大于70％,其峰值脉冲功率水平在400MHz下大于325W。此外,推挽式交叉中和SIT放大器在1到100MHz频段内CW输出功率大于100W、200MHz以下的输出功率达60W。正在研制的GaAsSIT使其使用频率高达X波段。预测晶体管性能表明在目前所用的这种频率范围内,这种新型器件将优于功率GaAsMESFET的性能。本文将论述新近制作的SiSIT的一些最新特性并讨论发展GaAsSIT技术的动机。
In order to meet the design requirements of future amplifiers, high-frequency power transistors must meet certain technical requirements simultaneously, such as high output power (CW and pulse operation), high efficiency and high gain in a single frequency or the entire wide frequency range. The Si and GaAs power electrostatic induction transistors (SITs) under development are based on these requirements to work in the HF to X-band frequency range. The results show that Si SITs developed so far are well suited for HF, VHF and UHF (1MHz ~ 1GHz) applications. Various device designs and amplifier circuit architectures are used to demonstrate high-power (CW and pulsed operation) JHF performance and wideband HF / VHF performance. The single-ended surface-gate SIT (SGSIT) has CW output power levels greater than 200W at 225MHz and greater than 70% drain efficiency with peak pulse power levels greater than 325W at 400MHz. In addition, the push-pull crossover and SIT amplifier in the 1 to 100MHz frequency band CW output power greater than 100W, 200MHz output power up to 60W. The GaAsSIT being developed has been used up to the X band. Predicting transistor performance indicates that this new device will outperform the power GaAsMESFET in the frequency range currently used. This article will discuss some of the latest features of the newly produced SiSIT and discuss the motivation for developing GaAsSIT technology.