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一、前言由周期表中III B族的铝、镓、铟和VB族的磷、砷、锑构成的所谓A~(III)B~V型化合物,为近年来极引人注意的化合物半导体。这主要是由于这些化合物具有一系列独特的性质。但是各种物质毕竟是各有其本性的;这些性质虽然可通过一定的物理或化学过程予以改变(如通过掺杂可使某一半导体具有一定的导电类型,一定的载流子浓度等),但由于受着物质的一些更本质的性质所限制,这种性质的改变也只能在一定的范围内变化。为了满足新技术不断提出的新要求,寻找具有所期性能的新半导体便成为半导体化学中的重要课题之
I. INTRODUCTION The so-called A ~ (III) B ~ V compounds, which are composed of group III, B, aluminum, gallium, indium and VB of phosphorus, arsenic and antimony in the periodic table, are extremely noticeable compound semiconductors in recent years. This is mainly due to the unique nature of these compounds. However, after all, various substances have their own nature; although these properties can be changed through certain physical or chemical processes (such as doping can make a certain semiconductor with a certain conductivity type, a certain carrier concentration, etc.) But because of the more qualitative nature of the material, the change of nature can only be changed to a certain extent. In order to meet the new requirements of new technologies, the search for new semiconductors with the desired performance has become an important issue in semiconductor chemistry