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基于锗衬底在石墨烯生长方面的自限制生长和表面催化特性,以甲烷(CH4)和氢气(H2)为前驱体,采用化学气相沉积(CVD)法分别在锗硅碳(SixGe1-xC0.02)(x=0.15,0.25,0.73)衬底和外延锗上直接生长石墨烯。研究了不同Si组分、H2与CH4体积流量比和生长温度对石墨烯质量的影响。利用光学显微镜(OM)、扫描电子显微镜(SEM)以及喇曼光谱对衬底和生长的石墨烯进行了表征分析。喇曼光谱结果表明,Si0.15Ge0.85C0.02衬底在750℃下可以生长出石墨烯,调节气体H2与CH4的体积流量比为50∶0.5时,生长出的石墨烯是双层的。OM和SEM结果表明,锗硅碳衬底具有比锗更好的热稳定性,高温下不会升华。
Based on the self-limiting growth and surface catalytic properties of germanium substrates in graphene growth, methane (CH4) and hydrogen (H2) precursors were deposited by chemical vapor deposition (CVD) on SiGe- 02) (x = 0.15,0.25,0.73) Direct growth of graphene on substrate and epitaxial germanium. The effects of different Si components, H2 and CH4 volume flow ratio and growth temperature on graphene quality were studied. The substrate and grown graphene were characterized by optical microscope (OM), scanning electron microscopy (SEM) and Raman spectroscopy. The results of Raman spectroscopy show that graphene can be grown at 750 ℃ for Si0.15Ge0.85C0.02 substrate. When the volume flow ratio of H2 to CH4 is adjusted to 50:05, the grown graphene is double-layered. OM and SEM results show that the SiGe substrate has better thermal stability than germanium and does not sublimate at high temperatures.