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介绍了通过双晶x 射线衍射测量超薄外延层厚度的一种方法。利用回摆曲线中的干涉条纹测量了通过MBE生长的Ga0.7Al0.3As/Ga0.9Al0.1As/Ga0.7Al0.3As结构的各层层厚
A method of measuring the thickness of ultrathin epitaxial layer by twin crystal x-ray diffraction is introduced. The thickness of each layer of Ga0.7Al0.3As / Ga0.9Al0.1As / Ga0.7Al0.3As structures grown by MBE was measured using the interference fringes in the sway curve