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介绍了针对利用原位水汽生成工艺制作的超薄栅介质膜的电学特性研究。通过电荷泵和栅极隧穿漏电流的测试,证明了原位水汽生成工艺相比传统炉管氧化工艺能够有效地提高界面态特性,这种电学特性上的提高被认为与活性氧原子的氧化机制有关。同时,通过测试还发现提高生长温度和减小H2在反应气体中的比重可以获得更好的电特性,这也指明了原位水汽生长工艺存在进一步提高的可能。
The electrical properties of ultra-thin gate dielectric films fabricated by in-situ vapor generation process are introduced. Through the charge pump and gate tunneling leakage current test, it is proved that the in-situ water vapor generation process can effectively improve the interface state characteristics compared with the traditional tube oxidation process. This improvement in electrical characteristics is believed to be associated with the oxidation of active oxygen atoms Mechanism related. At the same time, it is also found through tests that increasing the growth temperature and decreasing the specific gravity of H2 in the reaction gas can obtain better electrical characteristics, which also indicates that there is a possibility that the in-situ vapor growth process may be further improved.