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为了进一步降低器件的导通电阻,提出了一种新型的ACCUFET结构——栅增强功率ACCUFET(GE-ACCUFET)。这种器件同时具有普通ACCUFET和GE-UMOS的优点,而且导通电阻比这两种器件都要低。设计了一个击穿电压约106 V,导通电阻为2.18×10-4Ω.cm2的栅增强型功率ACCUFET器件(GE-ACCUFET)。将这种新型器件与GE-UMOS、普通ACCUFET进行对比,并进一步研究器件的结构参数对器件性能的影响。通过ATLAS仿真软件的建模仿真得到的数据显示,新型器件的导通电阻与GE-UMOS、普通ACCUFET相比,均有大幅度的降低。仿真还得到了器件导通电阻和击穿电压与结构参数H,D,α的函数关系,这对器件的生产制造有一定的指导作用。
In order to further reduce the on-resistance of the device, a new type of ACCUFET structure-gate enhancement power ACCUFET (GE-ACCUFET) is proposed. This device has both the advantages of conventional ACCUFET and GE-UMOS, and the on-resistance is lower than both devices. A gate-enhanced power ACCUFET device (GE-ACCUFET) with a breakdown voltage of about 106 V and on-resistance of 2.18 × 10 -4 Ω · cm 2 was designed. The new device is compared with GE-UMOS and general ACCUFET, and further study the influence of device structure parameters on device performance. Data obtained through the modeling and simulation of ATLAS simulation software show that the on-resistance of the new device is greatly reduced compared with GE-UMOS and normal ACCUFET. Simulation also get the device on-resistance and breakdown voltage and structure parameters H, D, α as a function of the device manufacturing of a certain guiding role.