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对同一原生非掺杂InP单晶进行了一系列物理测试分析,研究了材料的光电导率与温度的依从关系,在295~318 K内,温度系数为-3×10-4eV/K,测得的室温禁带宽度为1.339 2 eV。禁带宽度Eg的磁性系数为8.6×10-4eV/T,材料的磁光特性测量结果为1.8 T。由此数据可得,约化电子有效质量mr*为0.067m0。由热电功率测量结果可得室温塞贝克系数为565μV/K。由此值以及霍尔测量值,可计算出状态密度有效质量md*为0.075 7m0。由该值和上面提到的约化电子有效质量可得到InP样品的价带电子有效质量mv*为0.591m0。
A series of physical testing and analysis of the same native undoped InP single crystal were carried out. The dependence of photoconductivity and temperature on the material was studied. The temperature coefficient was -3 × 10 -4 eV / K within 295 ~ 318 K, The bandgap obtained at room temperature is 1.339 2 eV. The magnetic coefficient of the forbidden band width Eg is 8.6 × 10 -4 eV / T, and the magneto-optical characteristic of the material is measured. From this data, the reduced electron effective mass mr * is 0.067m0. The Seebeck coefficient at room temperature is 565 [mu] V / K from the thermoelectric power measurement. From this value and the Hall measurement, the state density effective mass md * can be calculated as 0.075 7m0. From this value and the reduced electron effective mass mentioned above, the valence band electron effective mass mv * of the InP sample is 0.591 m0.