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研究了用注入掩埋氧化物的绝缘体上的硅(SOI)作衬底、并经不同的注入后退火处理而制作的CMOS器件的总剂量特性。所测量到的正面沟道SOI/CMOS器件的阈值电压漂移、亚阈值电压斜率衰减和迁移率衰减情况,与采用相同办法制作的体器件的这些参数的变化情况是一样的。 只要不影响正沟道晶体管性能,加负衬偏可降低背面沟道的阈值电压漂移。在目前采用的工艺条件下,正沟道器件的辐照性能与注入氧后的退火温度无关。辐照时,在硅/隐埋氧化物界面上氧的沉积会促进背沟器件界面态的产生。
The total dose characteristics of CMOS devices fabricated using silicon on insulator (SOI) implanted with buried oxide as a substrate and annealed after different implantations were investigated. The measured threshold voltage drift, subthreshold voltage slope attenuation, and mobility attenuation of the front channel SOI / CMOS device are the same as those of the bulk devices fabricated in the same manner. Negative liner biasing can reduce the threshold voltage drift of the back channel as long as it does not affect the performance of the positive channel transistor. Under the current process conditions, the irradiation performance of the positive channel device has nothing to do with the annealing temperature after oxygen injection. During irradiation, the deposition of oxygen at the silicon / buried oxide interface promotes the interface state of the back-channel device.