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本文研究了GaAs MESFET有源层和n~+层Si~+注入的红外快速退火行为。用该技术获得的有源层和n~+层的载流子浓度与迁移率分别为1～2×10~(17)cm~3和3000～3500cm~2/V·s以及1～2×10~(18)cm~(-3)和1500cm~2/V·s,制成的单栅FET每毫米栅宽跨导为120mS,在4GHz下,NF=1.1dBGa=12.5dB。实验证实了快速退火比常规炉子热退火具有注入杂质再分布效应弱和对衬底材料热稳定性要求低的优点。对两种退火的差别在文中也作了讨论。
In this paper, the rapid infrared annealing of the GaAs MESFET active layer and the n ~ + Si ~ + implantation is investigated. The carrier concentration and mobility of the active layer and the n ~ + layer obtained by this technique are 1 ~ 2 × 10 ~ (17) cm ~ 3 and 3000 ~ 3500cm ~ 2 / V · s and 1 ~ 2 × 10 ~ (18) cm ~ (-3) and 1500cm ~ 2 / V · s. The fabricated single-gate FET has a gate-to-gate transconductance of 120mS per millimeter and NF = 1.1dBGa = 12.5dB at 4GHz. The experimental results show that the rapid annealing has the advantage of less redistribution of implanted impurities and lower thermal stability of the substrate than conventional thermal annealing. The difference between the two types of annealing is also discussed in the article.