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本文为综述稿。扼要叙述了高温电子器件的重要性及CMOS作为高温电子器件发展的潜力。着重介绍了提高CMOS工作温度的三大措施:1、调整掺杂浓度和几何尺寸,提出了掺杂浓度的四种选择方案及光刻尺寸的折衷考虑。通过实验结果的概括,指出体硅CMOS可以工作到300℃;2、采用CMOS/SOS结构一简要说明了这种工艺可以使工作温度高达375℃;3、采用适当的金属化层一介绍了溅射非晶金属(Ni—Nb,Ni—Mo,Mo—Si,W—Si四种合金系绕)薄膜及溅射细晶粒Ti—W等两种金属化方法,较详细地介绍了工艺步骤及效果。
This article is for review. The importance of high temperature electronic devices and the potential of CMOS as a high temperature electronic device are briefly described. Three measures to improve the working temperature of CMOS are emphatically introduced: 1. The doping concentration and geometrical size are adjusted, and four options of doping concentration and eclectic consideration of lithography size are put forward. Through the summary of the experimental results, it is pointed out that the bulk silicon CMOS can work to 300 ℃; 2, using CMOS / SOS structure a brief description of this process can make the working temperature up to 375 ℃; 3, using the appropriate metal layer Two kinds of metallization methods of sputtering amorphous metal (Ni-Nb, Ni-Mo, Mo-Si, W-Si four alloys around the film) and sputtering fine grain Ti-W and so on, And the effect.