论文部分内容阅读
在不同气氛下制备了YF3掺杂钛酸钡材料,并对其电阻的正温度系数特性进行了研究。借助于XRD、SEM、XRF、阻温特性测试仪和阻抗分析仪,研究了不同处理气氛对YF3掺杂钛酸钡材料结构和性能的影响。研究结果表明,在空气和在氩气中烧结的YF3掺杂钛酸钡材料都是N型半导体,其中Y取代A位,F取代O位,并对在氩气气氛中烧结的YF3掺杂钛酸钡材料还观察到了不同的PTCR效应。这种PTCR效应的产生可能是由于存在新的取代机制──O位取代的半导化机制引起的。
YF3-doped barium titanate materials were prepared under different atmospheres, and the positive temperature coefficient characteristics of their resistance were studied. The effects of different treatment atmospheres on the structure and properties of YF3-doped barium titanate materials were investigated by means of XRD, SEM, XRF, temperature-resistance tester and impedance analyzer. The results show that the YF3-doped barium titanate materials sintered in air and in argon are all N-type semiconductors, in which Y replaces the A site and F replaces the O site, and YF3-doped titanium sintered in an argon atmosphere Barium carbonate materials also observed different PTCR effects. This PTCR effect may be due to the existence of a new substitution mechanism ─ ─ O-substituted semiconducting mechanism.