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围绕Ⅲ族氮化物半导体在紫外战术导弹逼近告警系统中的潜在应用前景,设计出一种基于新型Ⅲ族氮化物半导体光电阴极的紫外变像管,确定了影响光电阴极光电发射性能的Al摩尔组分、膜层厚度和P型掺杂水平。利用高分辨率X射线衍射仪和紫外分光光度计,对光电阴极结构和光学日盲特性进行仿真分析和测试。紫外变像管的光谱辐射灵敏度测试结果显示:探测器像管的辐射灵敏度在220~270 nm波段范围内波动较小,在波长266 nm处的辐射灵敏度为39.7 m A/W,光谱响应从波长270 nm之后开始急剧下降,表明其本征具有良好的日盲紫外属性。基于变像管的光谱辐射灵敏度测试结果及信噪比的作用距离模型,采用MODTRAN大气模拟软件包对以此变像管为核心探测器件的导弹逼近告警系统作用距离进行迭代求解。计算结果显示:导弹逼近告警系统的作用距离可达到7.1 km.
Aiming at the potential application of Group III nitride semiconductors in the tactical missile approach warning system for UV, a new type of VG tube based on the new Group III nitride semiconductor photocathode was designed and the Al molar group Points, film thickness and P-type doping levels. The high-resolution X-ray diffractometer and UV spectrophotometer were used to simulate and test the photocathode structure and optical blindness characteristics. The results of spectral radiance sensitivity of UV tube show that the sensitivity of detector tube is less fluctuated in the range of 220-270 nm, the radiation sensitivity at 266 nm is 39.7 m A / W, and the spectral response changes from wavelength After 270 nm began to decline sharply, indicating that its intrinsic good sun-blind UV properties. Based on the results of spectral radiance sensitivity test and signal-to-noise ratio range model, the MODTRAN atmospheric simulation software package was used to iteratively solve the range of the missile approximation alarm system with the probe as the core detection device. The calculation results show that the range of the missile approach alarm system can reach 7.1 km.