【摘 要】
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Magnetoresistive random access memories(MRAMs)have drawn the attention of radiation researchers due to their potential high radiation tolerance.In particular,sp
【机 构】
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KeyLaboratoryofMicroelectronicDevices&,IntegratedTechnology,UniversityofChineseofAcademySciences(
【基金项目】
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This work is financially supported by Strategic Priority Research Program of the CAS(Grant No.XDA18000000),Youth Innovation Promotion Association of CAS(Grant No.2015097).