【摘 要】
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We investigate effects of nitridation on A1N morphology, structural properties and stress.It is found that 3 min nitridation can prominently improve A1N crystal
【机 构】
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Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of S
论文部分内容阅读
We investigate effects of nitridation on A1N morphology, structural properties and stress.It is found that 3 min nitridation can prominently improve A1N crystal structure, and slightly smooth the surface morphology.However, 10min nitridation degrades out-of-plane crystal structure and surface morphology instead.Additionally, 3-min nitridation introduces more tensile stress (1.5 GPa) in A1N films, which can be attributed to the weaker islands 2D coalescent.Nitridation for 10 rain can introduce more defects, or even forms polycrystallinity interlayer, which relaxes the stress.Thus, the stress in A1N with 10 min nitridation decreases to -0.2 GPa compressive stress.
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