辉光放电淀积a-Si:H的工艺及其钝化机理研究

• 作 者: 殷晨钟
• 机 构: 无锡元件四厂
• 出 处: 半导体技术
• 发表日期: 1986年04期
• 关键词: 辉光放电 淀积 a-Si 反向漏电流 非晶硅 表面态密度 硅器件 反偏 表面钝化 器件

本文介绍采用辉光放电(G.D)法淀积含氢非晶硅(α-Si:H),并将其应用于硅器件的表面钝化,结果表明,采用α-Si:H钝化,特别是以α-Si:H作为SiO_2的二次钝化层,可使器件的表面态密度显著下降,反向漏电流降低约一个数量级,且可减少可动钠离子沾污的影响,得到较好的高温反偏性能.此外,还对α-Si:H的钝化机理作了一定的探讨.

This article describes the use of glow discharge (GD) method of deposition of hydrogen-containing amorphous silicon (α-Si: H), and its application to silicon surface passivation, the results show that the passivation of α-Si: H, Based on the fact that α-Si: H is the secondary passivation layer of SiO 2, the surface state density of the device is significantly decreased, the reverse leakage current is reduced by about one order of magnitude, and the influence of the removable sodium ion contamination is reduced. Of the high-temperature reverse bias performance.In addition, the passivation mechanism of α-Si: H is also discussed.